| Autor: |
Hishida, Yuji, Yoshie, Tomoyuki |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 7/10/1995, Vol. 67 Issue 2, p270, 3p, 1 Diagram, 7 Graphs |
| Abstrakt: |
Investigates the molecular beam epitaxy of p-type conducting zinc selenide and zinc-sulfur selenide. Application of simple nitrogen gas doping technique without plasma activation; Factors affecting the p-type conduction in the N[sub 2]-gas doped zinc selenide; Fabrication of light emitting diodes with a N[sub 2]-gas doped p-cladding layer. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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