Investigation of minority carrier trapping in n-type doped ZnSe using photoluminescence decay....
| Autor: | Massa, J.S., Buller, G.S. |
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| Zdroj: | Applied Physics Letters; 7/3/1995, Vol. 67 Issue 1, p61, 3p, 1 Chart, 2 Graphs |
| Abstrakt: | Examines the minority carrier trapping in n-type doped zinc selenide using photoluminescence decay measurements. Confirmation of the trapping and recombination process linearity; Impact of temperature on the luminescence intensity; Presence of deep acceptor levels. |
| Databáze: | Complementary Index |
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