Effective mass and band nonparabolicity in remote doped Si/Si[sub 0.8]Ge[sub 0.2] quantum wells.
Autor: | Whall, T.E., Plews, A.D. |
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Předmět: | |
Zdroj: | Applied Physics Letters; 5/15/1995, Vol. 66 Issue 20, p2724, 3p, 1 Chart, 2 Graphs |
Abstrakt: | Explores the effective masses in remote doped silicon/Si[sub 0.8]Ge[sub 0.2] quantum wells. Consideration of the effect of magnetic field and sheet densities; Evidence for the parabolicity of the valence band; Calculations for the triangular confinement of carriers. |
Databáze: | Complementary Index |
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