Inducing and imaging single molecule dissociation on a semiconductor surface: H2S and D2S on....

Autor: Rezaei, M.A., Stipe, B.C.
Předmět:
Zdroj: Journal of Chemical Physics; 10/8/1998, Vol. 109 Issue 14, p6075, 4p, 12 Black and White Photographs, 2 Graphs
Abstrakt: Investigates the induction and imaging molecule dissociation on a semiconductor surface. Use of variable-temperature, ultrahigh vacuum scanning tunneling microscope; Effect of sulfidation on the materials properties of alloys; Calculation of the activation barrier from the atomistic analysis of the dissociation rates.
Databáze: Complementary Index