| Autor: |
Pei-Wei Chen, Tser-Yu Lin, Ling-Wei Ke, Rickey Yu, Ming-Da Tsai, Stanley Yeh, Yi-Bin Lee, Bosen Tzeng, Yen-Horng Chen, Sheng-Jui Huang, Yu-Hsin Lin, Guang-Kaai Dehng |
| Předmět: |
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| Zdroj: |
IEEE Journal of Solid-State Circuits; May2009, Vol. 44 Issue 5, p1454-1463, 10p, 13 Black and White Photographs, 3 Charts, 6 Graphs |
| Abstrakt: |
This paper presents a single-chip CMOS quad-band (850/900/1800/1900 MHz) RF transceiver for GSM/GPRS/EDGE applications which adopts a direct-conversion receiver, a directconversion transmitter and a fractional-N frequency synthesizer with a built-in DCXO. In the GSM mode, the transmitter delivers 4 dBm of output power with 1° RMS phase error and the measured phase noise is -164.5 dBcIHz at 20 MHz offset from a 914.8 MHz carrier. In the EDGE mode, the TX RMS EVM is 2.4% with a 0.5 dB gain step for the overall 36 dB dynamic range. The RX NF and 11P3 are 2.7 dBI12 dBm for the low bands (850/900 MHz) and 3 dB/-11 dBm for the high bands (1800/1900 MHz). This transceiver is implemented in 0.13 μm CMOS technology and occupies 10.5 mm[sup2]. The device consumes 118 mA and 84 mA in TX and RX modes from 2.8 V, respectively and is housed in aS x 5mm[sup2] 40-pin QFN package. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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