Low temperature formation and evolution of a 10 nm amorphous Ni–Si layer on [001] silicon studied by in situ transmission electron microscopy.

Autor:	Alberti, Alessandra, Bongiorno, Corrado, Mocuta, Cristian, Metzger, Till, Spinella, Corrado, Rimini, Emanuele
Předmět:	LOW temperatures REACTION-diffusion equations SILICON NICKEL LATTICE theory NUCLEATION TRANSMISSION electron microscopy ANNEALING of metals
Zdroj:	Journal of Applied Physics; May2009, Vol. 105 Issue 9, p093506-1-093506-6, 6p, 6 Black and White Photographs, 2 Graphs
Abstrakt:	We investigated low temperature formation of a 10 nm thick amorphous Ni–Si layer after room temperature deposition of a 7 nm Ni layer on [001] Si, by in situ transmission electron microscopy analyses. Instead of a conventional time sequence of phases or an immediate formation of NiSi2 domains, annealing at 220 °C promotes Ni diffusion through a thin interfacial amorphous layer, formed during deposition, into the Si lattice until the entire supply of pure Ni atoms is consumed. High concentration nickel diffusion induces a crystalline-to-amorphous transformation of the original silicon lattice. Further increasing the temperature, in the range between 300 and 350 °C, causes crystalline NiSi2 domains to nucleate and grow within the amorphous matrix. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
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