| Autor: |
Lin, K.-W., Chen, T.-J., Guo, J.-Y., Ouyang, H., Wei, D.-H., van Lierop, J. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; Apr2009, Vol. 105 Issue 7, p07D710-07D712, 3p, 1 Black and White Photograph, 2 Graphs |
| Abstrakt: |
The correlation between the ion-beam bombardment and the exchange bias magnetism in NiFe (10 nm)/Mn (25 nm) bilayers was studied. While the bottom Mn layers bombarded by different Ar ion-beam energies (VEH from 70 to 150 V) retained the same structure, significant differences in exchange bias were observed when in contact with a top NiFe layer. The dependence of the exchange bias field, Hex, with increasing VEH suggests strongly that the Ar ion-beam bombardment process may create uncompensated Mn spins (Hex enhancement) or increase the spin misalignment in ferromagnet (FM)/antiferromagnet (AF) interfaces (Hex decrease), depending on the energy used. A schematic FM/AF spin structure was proposed to explain this unusual exchange bias behavior. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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