| Autor: |
Szmulowicz, F., Elhamri, S., Haugan, H. J., Brown, G. J., Mitchel, W. C. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; Apr2009, Vol. 105 Issue 7, p074303-074309, 5p, 1 Chart, 4 Graphs |
| Abstrakt: |
We report on a study of the in-plane carrier mobility in InAs/GaSb superlattices as a function of carrier density. Instead of using a number of differently doped samples, we use the persistent-photoconductivity effect to vary the carrier density over a wide range from n- to p-type in single samples and perform Hall effect measurements. Hence, our data are not obscured by sample to sample nonuniformities. We demonstrate that low-temperature in-plane mobilities are limited by screened interface roughness scattering (IRS), although present models of two-dimensional carrier screening of IRS lead to a limited agreement with our data. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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