| Autor: |
Hyunsoo Kim, Jae-Hyun Ryou, Dupuis, Russell D., Taesung Jang, Yongjo Park, Sung-Nam Lee, Tae-Yeon Seong |
| Předmět: |
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| Zdroj: |
IEEE Electron Device Letters; Apr2009, Vol. 30 Issue 4, p319-321, 3p |
| Abstrakt: |
Electrical characteristics of metal contacts to a laser-irradiated thin-film N-polar n-type GaN surface are investigated. It is shown that the laser irradiation of the N-polar n-GaN results in a significant increase (as high as 3.0 x 10[sup20] cm[sup-3]) in the electron concentration and a decrease in the Schottky barrier height by 0.05 eV (0.28 eV), as estimated using Pt-based Schottky diodes (X-ray photoemission spectroscopy). Ti/Al contacts to the laser-irradiated N-polar sample exhibit an excellent Ohmic behavior with thermal stability up to 600 °C, indicating that the laser irradiation treatment can be a very promising technology in practical applications. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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