EL2, EL3, and EL6 defects in GaAs highly implanted with sulfur.
| Autor: | Yokota, Katsuhiro, Takano, Hiromichi, Ando, Yasunori |
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| Zdroj: | Journal of Applied Physics; 11/1/2000, Vol. 88 Issue 9, p5017, 5p, 1 Chart, 4 Graphs |
| Abstrakt: | Examines defects in gallium arsenide highly implanted with sulfur. Distribution profiles of carrier and atom concentrations of annealed sulfur; Spectra measured for annealed samples that were subject to thin layer removal of various thicknesses. |
| Databáze: | Complementary Index |
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