| Autor: |
Anderson, Christopher N., Naulleau, Patrick P. |
| Předmět: |
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| Zdroj: |
Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; Mar2009, Vol. 27 Issue 2, p665-670, 6p, 1 Black and White Photograph, 1 Diagram, 2 Charts, 1 Graph |
| Abstrakt: |
A corner rounding metric has been used to determine the deprotection blur of Rohm and Haas XP 5435, XP 5271, and XP 5496 extreme ultraviolet (EUV) photoresists as base wt % is varied, an experimental open platform photoresist (EH27) as base wt % is varied, and TOK EUVR P1123 and FUJI 1195 photoresists as postexposure bake temperature is varied. In the XP 5435, XP 5271, XP 5496, and EH27 resist platforms, a six times increase in base wt % reduces the size of successfully patterned 1:1 lines by over 10 nm and lowers intrinsic line-edge roughness (LER) by over 2.5 nm without changing deprotection blur. In TOK EUVR P1123 photoresist, lowering the PEB temperature from 100 to 80 °C reduces measured deprotection blur (using the corner metric) from 30 to 20 nm and reduces the LER of 50 nm 1:1 lines from 4.8 to 4.3 nm. These data are used to drive a lengthy discussion about the relationships between deprotection blur, LER, and shot noise in EUV photoresists. The authors provide two separate conclusions: (1) shot noise is probably not the dominant mechanism causing the 3–4 nm EUV LER floor that has been observed over the past several years; (2) chemical contrast contributes to LER whenever deprotection blur is large relative to the printed half-pitch. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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