| Autor: |
Anderson, G. I. R., Wei, H.-X., Porter, N. A., Harnchana, V., Brown, A. P., Brydson, R. M. D., Arena, D. A., Dvorak, J., Han, X.-F., Marrows, C. H. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; Mar2009, Vol. 105 Issue 6, p063904-063904-3, 3p, 1 Diagram, 2 Graphs |
| Abstrakt: |
Annealing is necessary to achieve giant tunneling magnetoresistance (TMR) values in sputtered CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs). In this study three complementary techniques were used to study the resulting changes in junction microstructure. The as-deposited TMR was modest, 5%, but rose to 101% after annealing at 325 °C for 1 h, corresponding to the tunneling spin polarization rising from 16% to 58%. Soft x-ray resonant magnetic scattering showed a roughening of the magnetic interfaces of the MTJ free layer, confirmed by transmission electron microscopy, which also showed the changes in the CoFeB and MgO to a lattice-matched polycrystalline form. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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