| Autor: |
Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Markov, A. V., Yugova, T. G., Petrova, E. A., Amano, H., Kawashima, T., Scherbatchev, K. D., Bublik, V. T. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; Mar2009, Vol. 105 Issue 6, p063708-063717, 9p, 3 Black and White Photographs, 2 Charts, 11 Graphs |
| Abstrakt: |
Structural and electrical properties of nonpolar m-GaN films grown on m-SiC using standard metalorganic chemical vapor deposition (MOCVD) and two versions of sidewall epitaxial lateral overgrowth were studied. It is shown that lateral overgrowth allows one to dramatically reduce the dislocation density from over 109 cm-2 to ∼107 cm-2. In good correlation with that we observed a strong reduction in the density of electron traps Ec-0.25 eV and Ec-0.6 eV from over 1015 cm-3 to ∼1014 cm-3, respectively, in MOCVD m-GaN and in laterally overgrown m-GaN. Preliminary studies of the effects of changing the V/III ratio and of Si doping were performed. The MOCVD m-GaN films grown with high V/III ratio of 1000 were semi-insulating, with the Fermi level pinned near the 0.6 eV traps. Decreasing the V/III value to 250 shifted the Fermi level upward, close to the level of the 0.25 eV traps. Si doping in laterally overgrown samples strongly suppressed the formation of major electron traps but enhanced the formation of hole traps near Ev+0.9 eV. We also report on electrical properties of the GaN interface with the AlN buffer used to facilitate good quality growth on SiC. These properties are dominated by a high concentration of 0.15 eV traps. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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