| Autor: |
Isogai, Hiromichi, Toyoda, Eiji, Izunome, Koji, Kashima, Kazuhiko, Mashita, Takafumi, Toyoda, Noriaki, Yamada, Isao |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; 3/15/2009, Vol. 1099 Issue 1, p35-38, 4p, 2 Black and White Photographs, 1 Diagram, 3 Graphs |
| Abstrakt: |
Precise surface processing of a silicon wafer was studied by using a gas cluster ion beam (GCIB). The damage caused to the silicon surface was strongly dependent on irradiation parameters. The extent of damage varied with the species of source gas and the acceleration voltage (Va) of cluster ions. It also varied with the cluster size and residual gas pressure. The influence of electron acceleration voltage (Ve) used for ionization of a neutral cluster was also investigated. The irradiation damage, such as an amorphous silicon (a-Si) layer, a mixed layer of a-Si and c-Si (transition layer), and surface roughness, was increased with Ve. It is suggested that the increase in the amount of energy per atom was induced by high Ve, because of variation of the cluster size and/or cluster charge. An undamaged smooth surface can be produced by Ar-GCIB irradiation at low Ve and Va. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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