Temperature Dependence of Spatially Resolved Picosecond Laser Induced Transients in a Deep Submicron CMOS Inverter.

Autor:	Laird, Jamie S., Yuan Chen, Tuan Vo, Edmonds, Larry, Scheick, Leif, Adell, Philippe
Předmět:	COMPLEMENTARY metal oxide semiconductors DIGITAL electronics LOGIC circuits TRANSISTOR-transistor logic circuits ELECTRIC transients GAMMA ray bursts ELECTRIC inverters ELECTRIC current converters ELECTRIC oscillators
Zdroj:	IEEE Transactions on Nuclear Science; Feb2009 Part 2 of 2, Vol. 56 Issue 1, p220-228, 9p, 2 Diagrams, 5 Graphs
Abstrakt:	Spatially-resolved picosecond laser induced transients have been measured in a 0.18 jsm CMOS inverter test structure as a function of temperature. Sensitive n-drain and p-drain nodes have been scaled in size to accommodate characteristic differences between ion and laser tracks. Images based on pulse characteristics have been collected from 325 K to 400 K and transient currents extracted from laser strikes to both the OFF drain and its surroundings. With increasing temperature strikes to the OFF drain result in a pulse width which appears to broadens whilst the charge collected surprisingly decreases. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
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