A “thru-short” method for noise de-embedding of MOSFETs.

Autor: Lan Nan, Yong-Zhong Xiong, Koen Mouthaan, Ammar Issaoun, Jinglin Shi, Ban-Leong Ooi
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Zdroj: Microwave & Optical Technology Letters; May2009, Vol. 51 Issue 5, p1379-1382, 4p, 2 Diagrams, 1 Graph
Abstrakt: A “thru-short” noise de-embedding method for MOSFETs is presented. The capability of the “thru-short” method has been validated through a comparison of measured and de-embedded noise parameters using different methods. It is shown that the “thru-short” method is reliable for on-wafer de-embedding of both S-parameters and noise parameters up to 18 GHz. Noise contributions from the parasitics due to the contact pads and interconnections surrounding the MOSFET can be determined and removed accurately. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 1379–1382, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24330 [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index