| Autor: |
Kim, Gun Hwan, Lee, Hyun Ju, Jiang, An Quan, Park, Min Hyuk, Hwang, Cheol Seong |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; Feb2009, Vol. 105 Issue 4, pN.PAG, 5p, 1 Diagram, 4 Graphs |
| Abstrakt: |
This study examined the imprint mechanism of a ferroelectric Pt/Pb(Zr,Ti)O3(150-nm-thick)/Pt capacitor using pulse switching transient current measurements. The progression of the imprint was well explained by the propagation of a localized charge injection area, where there was an increase in coercive voltage and interfacial capacitance over the entire capacitor area. The as-received samples exhibited uniform interfacial capacitance over the total area. Charge injection resulted in a more rectified remanent polarization–applied voltage relationship compared with the as-received sample. Analytic functional forms for the switching charge and local switching area were also derived. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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