| Autor: |
Junghyo Nah, Liu, E.-S., Shahrjerdi, D., Varahramyan, K. M., Banerjee, S. K., Tutuc, E. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 2/9/2009, Vol. 94 Issue 6, pN.PAG, 3p, 1 Diagram, 2 Graphs |
| Abstrakt: |
We demonstrate dual-gated germanium (Ge)-silicon germanium (SixGe1-x) core-shell nanowire (NW) field effect transistors (FETs) with highly doped source (S) and drain (D). A high-κ HfO2 gate oxide was deposited on the NW by atomic layer deposition, followed by TaN gate metal deposition. The S and D regions of NW were then doped using low energy (3 keV) boron (B) ion implantation with a dose of 1015 cm-2. The electrical characteristics of these devices exhibit up to two orders of magnitude higher current and an improved ON/OFF current ratio by comparison to dual-gated NW FET with undoped S/D. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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