| Autor: |
Lázaro, A., Cerdeira, A., Nae, B., Estrada, M., Iñíguez, B. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; Feb2009, Vol. 105 Issue 3, pN.PAG, 9p, 2 Diagrams, 9 Graphs |
| Abstrakt: |
Silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFETs) are excellent candidates to become an alternative to conventional bulk technologies. The most promising SOI devices for the nanoscale range are based on multiple gate structures such as double-gate (DG) MOSFETs. These devices could be used for high-frequency applications due to the significant increase in the transition frequency fT for these devices. For low noise radiofrequency and microwave applications, high-frequency noise models are required. In this work, we present compact expressions to model the drain and gate current noise spectrum densities and their correlation for DG MOSFETs. These expressions depend on the mobile charge densities that are obtained using analytical expressions obtained from modeling the surface potential and the difference of potentials at the surface and at the center of the Si doped layer without the need to solve any transcendental equations. Using this model, the DG MOSFET noise performances are studied. The current and noise models can be easily introduced in circuit simulators. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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