| Autor: |
Lapenko, A. A., Lisitsyn, S. V., Tomina, E. V., Valyukhov, D. P., Mittova, I. Ya. |
| Předmět: |
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| Zdroj: |
Inorganic Materials; Oct2008, Vol. 44 Issue 11, p1163-1168, 6p, 3 Black and White Photographs, 1 Diagram, 5 Graphs |
| Abstrakt: |
Structure of the surface layers of V2O5(20, 38 nm)/InO and V(25, 15 nm)/InP heterostructures, including surface morphology, distributions of elements over the oxidized-layer thickness, phase composition, and the interface quality, are studied both before and after oxidation. According to the Auger-and IR-spectroscopy data, the layers obtained as a result of the oxidation are mainly indium phosphates and vanadates with nonuniform distributions of elements over the oxide-film thickness. Results describing the kinetics of heterostructure oxidation are obtained. The solid-phase diffusion of the substrate components is shown to be the governing process. This implies that the considered process is catalytic. The reaction rate is weakly dependent on the catalyst amount. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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