| Autor: |
Parfenyuk, O. A., Ilashchuk, M. I., Ulyanitsky, K. S. |
| Předmět: |
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| Zdroj: |
Semiconductors; Nov2008, Vol. 42 Issue 11, p1286-1288, 3p, 1 Chart, 3 Graphs |
| Abstrakt: |
Electrical properties of the Cd1 − x Mg x Te alloys of various composition (0.1 ≤ x ≤ 0.3) are studied. It is established that at x = 0.1, a low-resistivity p-type material with parameters close to undoped CdTe is formed. A feature of the Cd0.9Mg0.1 Te crystals is that, during deposition of Cu on their surface from a saturated CuSO4 solution, ohmic contact is formed, the characteristics of which do not worsen in a wide temperature range (80−300 K). The study of characteristics with and without illumination of the Cu/ p-Cd0.9Mg0.1Te/ n-Cd0.9Mg0.1Te/In structures have shown that they are promising as photoconverters of solar radiation. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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