| Autor: |
Oo, W. M. Hlaing, Saraf, L. V., Engelhard, M. H., Shutthanandan, V., Bergman, L., Huso, J., McCluskey, M. D. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; Jan2009, Vol. 105 Issue 1, p013715, 4p, 1 Chart, 7 Graphs |
| Abstrakt: |
We studied the dopant concentration distribution and conductivity in ZnO:Mn films grown by metalorganic chemical vapor deposition. The ion beam, surface, and microstructural properties of undoped ZnO films were compared with Mn-doped ZnO films. Suppression of ZnO conductivity was observed for Mn doping up to ∼4.5 at. %. The presence of Mn2+, confirmed by x-ray photoelectron spectroscopy, is correlated with the reduction in conductivity. Variable-temperature Hall effect measurements yield an activation energy of 170 meV, consistent with deep donors in the bulk or at the interface. The results suggest that the incorporation of substitutional Mn suppresses the formation of native defects such as oxygen vacancies. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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