| Autor: |
Jun, S.W., Lee, R.T., Fetzer, C.M., Shurtleff, J.K., Stringfellow, G.B., Choi, C.J., Seong, T.-Y. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 10/1/2000, Vol. 88 Issue 7, p4429, 5p, 1 Diagram, 3 Graphs |
| Abstrakt: |
Studies the effect of the surfactant bismuth on the ordering and surface structure in GaInP layers grown by organometallic vapor phase epitaxy. Disordering caused by the addition of bismuth during growth; Changes in surface structure occurring with the disordering. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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