Oxidation induced precipitation in Al implanted epitaxial silicon.
| Autor: | La Ferla, A., Galvagno, G., Giri, P.K., Franzo, G., Rimini, E., Raineri, V., Gasparotto, A., Cali, D. |
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| Zdroj: | Journal of Applied Physics; 10/1/2000, Vol. 88 Issue 7, p3988, 5p |
| Abstrakt: | Investigates the behavior of aluminum (Al) implanted in silicon during thermal oxidation. Dependence of the precipitation of Al into Al-O-defect complexes on the implant energy. |
| Databáze: | Complementary Index |
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