| Autor: |
Hatakeyama, H., Akagawa, T., Fukatsu, K., Suzuki, N., Tokutome, K., Yashiki, K., Anan, T., Tsuji, M. |
| Předmět: |
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| Zdroj: |
Electronics Letters (Institution of Engineering & Technology); 1/1/2009, Vol. 45 Issue 1, p45-46, 2p, 4 Graphs |
| Abstrakt: |
1.1 µm-range high-speed oxide-VCSELs with InGaAs/GaAsP strain-compensated multiple quantum wells (MQWs) have been developed. 25 Gbit/s 100°C operation and high reliability over 3 000 h under 150°C were demonstrated. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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