| Autor: |
Hamers, E. A. G., Fontcuberta i Morral, A., Niikura, C., Brenot, R., Rocai i Cabarrocas, P. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 9/15/2000, Vol. 88 Issue 6, p3674, 15p, 1 Color Photograph, 3 Charts, 16 Graphs |
| Abstrakt: |
Investigates the growth of amorphous, microcrystalline and polymorphous silicon by studying the species contributing to the growth and resulting film structure. Surface reaction probability of the radicals and contribution of ions to the growth; Enhancement of chemical vapor deposition by deposition of amorphous silicon by plasma. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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