| Autor: |
Jiang, C.-S., Moutinho, H. R., Reedy, R., Al-Jassim, M. M., Blosse, A. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; Nov2008, Vol. 104 Issue 10, p104501, 4p, 1 Diagram, 3 Graphs |
| Abstrakt: |
We report on a two-dimensional investigation of the p-n junction in multicrystalline silicon solar cells using scanning Kelvin probe force microscopy (SKPFM). The junction location and depth were identified by SKPFM potential measurement and subsequent data analysis, where a procedure taking bias-voltage-induced changes in the potential and electric field was developed to avoid the effects of surface Fermi level pinning. Device simulation supported the junction identification procedure and showed a possible deviation of ∼40 nm in the junction identification. The two-dimensional electric-field images show that the shape of the junction follows the surface topography of the device, or, in other words, the junction depth is identical over the device. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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