| Autor: |
Shrivastava, A., Muzykov, P., Sudarshan, T. S. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; Nov2008, Vol. 104 Issue 9, p093532, 4p, 1 Color Photograph, 4 Diagrams |
| Abstrakt: |
Growth of high quality epilayers on low off-cut (≤4°) 4H-SiC substrates is essential for the fabrication of high performance power devices. Morphological defects such as “inverted pyramids” are device killers and hence knowing their origin and developing methods to eliminate them are essential. The nucleation sites and formation mechanism of the inverted pyramid defects, investigated using atomic force microscopy and KOH etching, are reported in this study. Partial dislocations, bounding the stacking faults, mostly aligned along the <11–20> directions, were found at the base of the inverted pyramid defects. It is shown that in addition to the basal plane dislocations, localized defects, attributed to clusters of impurities, serve as nucleation centers for stacking faults, and eventually the formation of inverted pyramid defects. A geometrical model is formulated to explain the formation mechanism of inverted pyramid defects. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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