| Autor: |
White, Nicholas R., Tokoro, Nobuhiro, Bell, Edward |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; 11/3/2008, Vol. 1066 Issue 1, p277-280, 4p, 5 Graphs |
| Abstrakt: |
The requirements for doping of semiconductor device layers have pushed the boundaries of implanter energy, for example, with the use of >5 MeV energies for fabrication of optical sensory arrays. With the higher energy comes the need to understand associated radiation risks. This paper presents original measured data quantifying the range in which safe commercial implantation can be accomplished without radiation hazards. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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