| Autor: |
Dunn, James P., Rolland, James L., Lundquist, Paul, Bishop, Steve |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; 11/3/2008, Vol. 1066 Issue 1, p368-371, 4p, 1 Chart, 7 Graphs |
| Abstrakt: |
The residue buildup in an ion source can be energetically transported down the ion implanter beamline delivering unwanted dopants to the target area. Of particular concern are contaminants within one AMU of the target species such as 50PF+ in a 49BF2+ beam causing counter-doping dose errors. Significant beam currents attributable to memory effect have been observed more than an hour after the species gas has been changed. This paper shows how Atmel Corporation, Colorado Springs, Colorado evaluated a new XeF2 in-situ clean process as an effective means of reducing the risk of species cross contamination. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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