| Autor: |
Yedave, Sharad, Sweeney, Joe, Byl, Oleg, Letaj, Shkelqim, Wodjenski, Mike, Hilgarth, Monica, Marganski, Paul, Bishop, Steve, Eldridge, David, Kaim, Robert |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; 11/3/2008, Vol. 1066 Issue 1, p376-379, 4p, 1 Color Photograph, 1 Black and White Photograph, 5 Diagrams, 3 Graphs |
| Abstrakt: |
Since the introduction of XeF2 in-situ cleaning, its use in production implanters has been mainly focused on cleaning ion sources by flowing the cleaning vapor through the source arc chamber. This has been called “Dynamic” in-situ cleaning. “Static” in-situ cleaning is a different method under development at ATMI which allows an entire vacuum chamber and its contents to be cleaned. The chamber is filled to a pressure of 1–3 Torr of XeF2 vapor, which reacts with deposited material on all internal surfaces, and the reaction by-products are then pumped away. When applied to the source vacuum chamber, the Static cleaning method allows cleaning vapor to contact components, such as the HV bushing and the manipulator assembly, which may not be adequately cleaned with the Dynamic method. Recently, ATMI has installed a prototype Static in-situ cleaning system on an in-house Ion Source Test Stand in Danbury, CT. This paper will describe the prototype cleaning system and process and its applicability to production implant systems. We will also present experimental data showing removal of various dopant residues and the cleaning effectiveness for different components and surfaces inside the source vacuum chamber. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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