| Autor: |
Shao, Yan, Hautala, John, Larson, Larry, Jain, Amitabh |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; 11/3/2008, Vol. 1066 Issue 1, p411-414, 4p, 2 Black and White Photographs, 1 Chart, 4 Graphs |
| Abstrakt: |
A long-standing problem in the fabrication of junctions by ion implantation is the enhanced diffusion caused by interstitial agglomeration and dissolution on annealing. Another side effect is residual damage that leads to junction leakage. The gas cluster ion beam technique (GCIB) offers a means of introducing dopant atoms without the creation of interstitials due to the low energy non-ballistic nature of the individual atoms and the localized thermal spike associated with the collision event between the large cluster and the silicon surface. We have employed cluster ion beams to infuse B into Si substrates to fabricate ultra-shallow junctions. Various annealing techniques were used to investigate GCIB B activation. We find that annealing at temperatures around 950 °C results in profiles that do not exhibit the extended tail characteristic of enhanced diffusion. This is in contrast to profiles in ion implanted samples, which inevitably result in enhanced diffusion. For laser and flash anneal, because the time scale of process is short, multiple anneal passes are needed in order to achieve low sheet resistance with little diffusion. We have shown that control of interfacial and surface smoothness is critical in improving junction characteristics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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