| Autor: |
Shu Qin, Zhuang, Kent, Shifeng Lu, McTeer, Allen, Morinville, Wendy, Noehring, Kari |
| Předmět: |
|
| Zdroj: |
AIP Conference Proceedings; 11/3/2008, Vol. 1066 Issue 1, p488-491, 4p, 2 Charts, 5 Graphs |
| Abstrakt: |
A newly-developed surface analysis technique, which combines Secondary Ion Mass Spectrometry (SIMS) with Angle-Resolved X-ray Photoelectron Spectroscopy (ARXPS), was used to achieve more accurate results of the retained impurity doses and profiles for ultra-low energy implants, including conventional beam-line implant and plasma immersion ion implantation (PIII). Using this method, it has been found that the B2H6 (Diborane) PIII demonstrates thicker native oxide and much more B dose loss during RTP and surface clean treatments than conventional beam-line ion implantation, due to the higher surface B concentration. In order to match the electrical parameters of the device, PIII must consider higher nominal dose to compensate the B loss. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
