| Autor: |
Aderhold, W., Hunter, A., Felch, S. B., Ranish, J. |
| Předmět: |
|
| Zdroj: |
AIP Conference Proceedings; 11/3/2008, Vol. 1066 Issue 1, p95-98, 4p, 10 Graphs |
| Abstrakt: |
We investigate photon effects for two thermal processes: implanted dopant activation and diffusion; and silicon oxidation. Because the Applied Materials Radiance Plus RTP system heats only one side of the wafer with lamps, the thermal and photon effects are separable by changing the side of the wafer that is irradiated. The difference in process results can then be interpreted in respect to the spectral difference of the lamp radiation and the grey body radiation emitted by the hot wafer. No significant effect due to the presence of high energy photons in either process was observed. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
