| Autor: |
Ardhuin, H., Chapman[a], J. N., Aitchison, P. R., Gillies, M. F., Kirk, K. J., Wilkinson, C. D. W. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 9/1/2000, Vol. 88 Issue 5, p2760, 6p, 3 Diagrams |
| Abstrakt: |
Describes how micron-size elements were created in the free layer of spin-tunnel junctions. Use of electron beam lithography and reactive ion etching; Reversal of elongated elements by the growth and subsequent annihilation of a quasiperiodic domain structure which evolves from the ends of the elements. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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