| Autor: |
Li, Y. F., Yao, B., Lu, Y. M., Gai, Y. Q., Cong, C. X., Zhang, Z. Z., Zhao, D. X., Zhang, J. Y., Li, B. H., Shen, D. Z., Fan, X. W., Tang, Z. K. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; Oct2008, Vol. 104 Issue 8, p083516, 10p, 3 Black and White Photographs, 4 Diagrams, 2 Charts, 8 Graphs |
| Abstrakt: |
The relationship between band gap and biaxial stress in wurtzite ZnO thin films has been investigated by side-inclination x-ray diffraction technique and optical absorbance spectrum as well as ab initio calculation. The experimental result shows that differing from other semiconductor thin films with hexagonal structure, such as GaN, the band gap of ZnO thin films increases with the increase in biaxial tensile stress. For explaining the difference, ab initio calculation is performed to simulate the relationship between band gap and biaxial stress of wurtzite ZnO and GaN. The calculated result indicates that the band gap of ZnO increases under biaxial tensile stress but GaN is opposite, supporting our experimental result. The band offset calculation shows that the conduction-band minimum (CBM) and the valence-band maximum (VBM) of ZnO and GaN offset to low energy under biaxial tensile stress. The VBM offset of ZnO is larger than the CBM, responsible for the increase in band gap. The VBM offset of GaN is smaller than the CBM, responsible for the decrease in band gap. The difference between ZnO and GaN is attributed to the strong p-d coupling in valence band of ZnO, but strong p-p coupling in valence band of GaN. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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