| Autor: |
Peyre, D., Poivey, Ch., Bonis, Ch., Mangeret, R., Salvaterra, G., Beumel, M., Pontoni, F., Bouchet, T., Pater, L., Bezerra, F., Ecoffet, R., Lorfèvre, E., Sturesson, F., Berger, G., Foy, J. C., Piquet, B. |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Nuclear Science; Aug2008 Part 1 of 2, Vol. 55 Issue 4, p2181-2187, 7p, 4 Diagrams, 9 Graphs |
| Abstrakt: |
This paper presents experimental data showing heavy ions inducing gate degradation in power MOSFETs. In the experiments, backside and front-side irradiations are performed. During backside irradiation, the heavy ion ranges are tuned in such way to control whether they hit the gate or not. Gate-to-source current loss (Φ) is measured versus heavy ions (H.I.) fluence Φ. Post-irradiation-gate-stress-test (PGST) allows measurement of gate breakdown voltage VBD (Φ) which is observed to decrease with (H.I.) fluence. Based on these experimental results, a hypothesis of substrate-generated carriers impact overlap of multiple strikes may explain gate degradation until SEGR triggering. This last hypothesis is supported by a statistical model approach of heavy ions multiple impacts. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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