| Autor: |
K H Lee, F S F Brossard, M Hadjipanayi, X Xu, F Waldermann, A M Green, D N Sharp, A J Turberfield, D A Williams, R A Taylor |
| Předmět: |
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| Zdroj: |
Nanotechnology; Nov2008, Vol. 19 Issue 45, p55307-55307, 1p |
| Abstrakt: |
We have registered the position and wavelength of a single InGaAs quantum dot using an innovative cryogenic laser lithography technique. This approach provides accurate marking of the location of self-organized dots and is particularly important for realizing any solid-state cavity quantum electrodynamics scheme where the overlap of the spectral and spatial characteristics of an emitter and a cavity is essential. We demonstrate progress in two key areas towards efficient single quantum dot photonic device implementation. Firstly, we show the registration and reacquisition of a single quantum dot with 50 and 150 nm accuracy, respectively. Secondly, we present data on the successful fabrication of a photonic crystal L3 cavity following the registration process. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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