Cathodoluminescent investigations of In x Ga1− x N layers.

Autor:	Domracheva, Yana V., Jmerik, Valentin N., Popova, Tatiana B., Zamoryanskaya, Maria V.
Předmět:	MICROPROBE analysis EPITAXY X-ray diffraction MOLECULAR beams CONSTITUTION of matter CRYSTAL growth SCANNING electron microscopy PARTICLES (Nuclear physics) PHYSICAL & theoretical chemistry
Zdroj:	Journal of Materials Science: Materials in Electronics; Oct2008 Supplement 1, Vol. 19, p319-323, 5p, 1 Chart, 6 Graphs
Abstrakt:	The aim of this work was the investigation of the InGaN epilayers of various contents and various thickness; namely the influence of these two factors upon the cathodoluminescent (CL) properties. The studied epilayers were grown by plasma assisted molecular beam epitaxy. The samples were studied by electron probe microanalysis, CL, X-ray diffraction (XRD), and scanning electron microscopy (SEM). Some interesting peculiarities of CL spectra were obtained; the nature of the CL bands is discussed. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
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