Gas indiffusion contribution to impedance in tin oxide thick films.

Autor: Ponce, M. A., Malagu, C., Carotta, M. C., Martinelli, G., Aldao, C. M.
Předmět:
Zdroj: Journal of Applied Physics; Sep2008, Vol. 104 Issue 5, p054907, 5p, 3 Diagrams, 1 Chart, 1 Graph
Abstrakt: The ac electrical resistance and capacitance of SnO2 thick films under vacuum and air atmosphere were analyzed using the Cole–Cole plot. To fit the experimental results, a simple circuit model that considers a capacitance and a resistance in parallel was employed. An explanation for the resistance variation considering spherical grains with different characteristics is proposed. A careful analysis of the resulting depletion layers and doping levels gives evidence for gas diffusion into the grains. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index