Autor: |
Schlesser, R., McClure, M.T., McCarson, B. L., Sitar, Z. |
Předmět: |
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Zdroj: |
Journal of Applied Physics; 12/1/1997, Vol. 82 Issue 11, p5763, 10p, 2 Diagrams, 17 Graphs |
Abstrakt: |
Studies the origin of field emission from wide band-gap semiconductors by a combination of voltage dependent field-emission energy distribution and current-voltage measurements. Coating of tip-shaped molybdenum emitters with layers of undoped diamond and cubic boron nitride powders; Improvement of emission current stability. |
Databáze: |
Complementary Index |
Externí odkaz: |
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