Bias voltage dependent field-emission energy distribution analysis of wide band-gap field emitters.

Autor: Schlesser, R., McClure, M.T., McCarson, B. L., Sitar, Z.
Předmět:
Zdroj: Journal of Applied Physics; 12/1/1997, Vol. 82 Issue 11, p5763, 10p, 2 Diagrams, 17 Graphs
Abstrakt: Studies the origin of field emission from wide band-gap semiconductors by a combination of voltage dependent field-emission energy distribution and current-voltage measurements. Coating of tip-shaped molybdenum emitters with layers of undoped diamond and cubic boron nitride powders; Improvement of emission current stability.
Databáze: Complementary Index