Photoluminescence and electron subband population in modulation doped AlGaAs/GaAs/AlGaAs...

Autor: Pozela, J., Juciene, V., Namajunas, A., Pozela, K., Mokerov, V. G., Fedorov, Yu. V., Kaminskii, V. E., Hook, A. V.
Předmět:
Zdroj: Journal of Applied Physics; 12/1/1997, Vol. 82 Issue 11, p5564, 4p, 3 Graphs
Abstrakt: Examines the anomalies in photoluminescence spectra of modulation doped AlGaAs/GaAs/AlGaAs double barrier heterostructures with various quantum well widths. Intensity of the photoluminescence peak excited by Ar laser; Calculations of electron-polar optical phonon scattering rate; Well-width dependence of electron scattering rate.
Databáze: Complementary Index