| Autor: |
Hai-sheng San, Xu-yuan Chen, Peng Xu, Gang Li, Lin-xian Zhan |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 8/11/2008, Vol. 93 Issue 6, p063506, 3p, 1 Diagram, 1 Chart, 3 Graphs |
| Abstrakt: |
Capacitance-voltage characteristics measured on metal-insulator-semiconductor structures are used to investigate dielectrics charging in the capacitive microelectromechanical switches. An analytical model based on this method has been established. Effects of electrical stress on charge accumulation in silicon-rich nitride were experimentally investigated. The charging parameters of the silicon-rich nitride were extracted by the exponential curve fitting method. The experimental results show that three main physical processes dominate the charging behavior of the silicon-rich nitride. It is expected that the accumulated charges can be eliminated by using an offset square-wave voltage to actuate the switches. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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