| Autor: |
Shih, An, Yeh, Jiun-Lin, Lee, Si-Chen, Yang, T. R. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 8/1/2000, Vol. 88 Issue 3, p1684, 4p, 2 Diagrams, 1 Graph |
| Abstrakt: |
Reports that as-deposited and plasma-treated hydrogenated and deuterated amorphous silicon films are prepared by plasma-enhanced chemical vapor deposition. Structural and electronic characteristics; Proportionality constants relating the integrated stretching mode absorption to the concentrations of Si-D and Si-H bonds. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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