| Autor: |
Roelkens, G., Liu, L., Van Thourhout, D., Baets, R., Nötzel, R., Raineri, F., Sagnes, I., Beaudoin, G., Raj, R. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; Aug2008, Vol. 104 Issue 3, p033117, 7p, 3 Diagrams, 6 Graphs |
| Abstrakt: |
The heterogeneous integration of a III–V thin film on top of a silicon-on-insulator (SOI) optical waveguide circuit by means of adhesive divinylsiloxane-benzocyclobutene (DVS-BCB) die-to-wafer bonding is demonstrated, thereby achieving light emission and enhanced nonlinearity in ultracompact SOI cavities. This approach requires ultrathin DVS-BCB bonding layers to allow the highly confined optical mode to overlap with the bonded III–V film. The transfer of sub-100-nm III–V layers using a 65 nm DVS-BCB bonding layer onto SOI racetrack resonator structures is demonstrated. Spontaneous emission coupled to a SOI bus waveguide, spectrally centered around the resonator resonances, is observed by optically pumping the III–V layer. Strong carrier-induced nonlinearities are observed in the transmission characteristics of the III–V/SOI resonator structure. The all-optical control of an optical signal in these III–V/SOI resonators is demonstrated. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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