| Autor: |
Bozzolo, Guillermo, Noebe, Ronadl D., Abel, Phillip B., Vij, D.R., Smith, Richard J. |
| Zdroj: |
Applied Computational Materials Modeling; 2007, p415-449, 35p |
| Abstrakt: |
In this chapter the growth of transition metal (TM) films, Fe, Co, Pd, Ni, and Ti, on surfaces of Al(110), Al(001), and A1(111) is discussed. Attention is drawn to similarities and differences arising from the substrate orientation. The tendency for Ti to grow as an overlayer while the other metals form interface alloys is discussed. Monte Carlo computer simulations using EAM potentials are presented for Ni on the three orientations of A1. Results of model calculations based on the BFS method are shown to nicely categorize the growth behavior of the five metals on Al in terms of the contribution of each atom to the overall formation energy. The technique of MeV ion backscattering and channeling has been used to study the interface structure and stoichiometry for the films on the Al surfaces. In some cases x-ray photoemission spectroscopy, low-energy (keV) He+ ion scattering, and low-energy electron diffraction are used to obtain additional information about the structure of the TM-Al interfaces. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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