| Autor: |
Schlager, John B., Bertness, Kris A., Blanchard, Paul T., Robins, Lawrence H., Roshko, Alexana, Sanford, Norman A. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; Jun2008, Vol. 103 Issue 12, p124309, 6p, 1 Diagram, 7 Graphs |
| Abstrakt: |
We report steady-state and time-resolved photoluminescence (TRPL) measurements on individual GaN nanowires (6–20 μm in length, 30–940 nm in diameter) grown by a nitrogen-plasma-assisted, catalyst-free molecular-beam epitaxy on Si(111) and dispersed onto fused quartz substrates. Induced tensile strain for nanowires bonded to fused silica and compressive strain for nanowires coated with atomic-layer-deposition alumina led to redshifts and blueshifts of the dominant steady-state PL emission peak, respectively. Unperturbed nanowires exhibited spectra associated with high-quality, strain-free material. The TRPL lifetimes, which were similar for both relaxed and strained nanowires of similar size, ranged from 200 ps to over 2 ns, compared well with those of low-defect bulk GaN, and depended linearly on nanowire diameter. The diameter-dependent lifetimes yielded a room-temperature surface recombination velocity S of 9×103 cm/s for our silicon-doped GaN nanowires. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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