| Autor: |
Ji-Weon Jeong, Rosenblum, Mark D. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 5/15/2000, Vol. 87 Issue 10, p7551, 7p, 1 Diagram, 7 Graphs |
| Abstrakt: |
Features a study which investigated plasma enhanced chemical vapor deposited silicon nitride-induced hydrogenation of defects in edge-defined film-fed grown multicrystalline silicon. Physical model for aluminum-enhanced silicon nitride hydrogenation; Experimental procedure; Results and discussion; Conclusions. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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