| Autor: |
Tian-zhi Liu, Zhi-gang Zhang, Xie, Dan, Yaoqi Dong, Tian-ling Ren, Li-tian Liu, Zhu, Jun |
| Předmět: |
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| Zdroj: |
Integrated Ferroelectrics; 2008, Vol. 98 Issue 1, p105-112, 8p, 1 Diagram, 6 Graphs |
| Abstrakt: |
Bi3.15Nd0.85Ti3O12 thin films of mixed orientations were grown on Pt/Ti/SiO2/Si substrates using the sol-gel method. The film annealed at 750°C is composed of grains with sizes of 450 nm. The samples were exposed on different doses of gamma rays. The polarization of the films shows the degradation after irradiation. The remnant polarization decreased from 15 μ C/cm2 to 7.4-9.8 μ C/cm2 at an applied voltage of 8 V. This degradation can be recovered partially to 11 μ C/cm2 by anneal in O2 ambition. The irradiated capacitors did not show any significant fatigue up to 5 × 1010 circles at frequency of 1 MHz. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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