| Autor: |
KAGAN, M. S., ALTUKHOV, I. V., PAPROTSKIY, S. K., SINIS, V. P., YASSIEVICH, I. N., KOLODZEY, J. |
| Předmět: |
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| Zdroj: |
International Journal of Nanoscience; Jun2007, Vol. 6 Issue 3/4, p279-282, 4p |
| Abstrakt: |
Transient characteristics of SiGe-QW laser structures were studied. The excitation of stimulated THz emission is shown to be the result of carrier injection through contacts. The mechanism of intra-center population inversion caused by carrier injection is suggested. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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